Samsung Unveils New Memory Module With Twice the Performance of DDR4

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Samsung on Thursday introduced that it had expanded its DRAM reminiscence portfolio by bringing a 512GB DDR5 module primarily based on high-k metallic gate (HKMG) course of know-how. The new reminiscence module is designed to fulfil the necessities in compute-hungry, high-bandwidth workloads in the fields of supercomputing, synthetic intelligence (AI), and machine studying (ML). The South Korean firm claimed that its DDR5 DRAM is succesful of delivering greater than twice the efficiency of present DDR4 modules with as much as 7,200 megabits per second (Mbps) knowledge switch charge.

Instead of utilizing the conventional silicon oxynitride, Samsung’s choice of going with the HKMG know-how for the insulation layer of the new reminiscence module is touted to cut back energy consumption by 13 % over DDR4 modules. The new materials will be capable to scale back the present leakage and assist the module attain new efficiency ranges, the firm mentioned.

Samsung first used the HKMG course of whereas designing its GDDR6 reminiscence in 2018. However, its adoption on the new module is mainly aimed to draw knowledge centres and enterprise clients who’re in search of high-speed reminiscence options to course of AI, ML, and knowledge analytics operations.

The DDR5 DRAM by Samsung stakes eight layers of 16Gb DRAM chips utilizing through-silicon through (TSV) know-how to supply 512GB of capability. The firm is, nevertheless, sampling completely different variations of the DDR5 module to cater to completely different reminiscence calls for over time.

Although present desktops and servers largely help DDR4, Intel has already proven some curiosity in direction of DDR5 modules. The chipmaker can also be working with Samsung significantly for its new growth.

“Intel’s engineering teams closely partner with memory leaders like Samsung to deliver fast, power-efficient DDR5 memory that is performance-optimised and compatible with our upcoming Intel Xeon Scalable processors, codenamed Sapphire Rapids,” mentioned Carolyn Duran, Vice President and General Manager of Memory and IO Technology at Intel, in a ready assertion.

Apart from Intel, Samsung is working with Advanced Micro Devices (AMD) and has despatched samples of its new reminiscence module to some knowledge centre platform builders, Bloomberg reported on Thursday.

“By bringing this type of process innovation to DRAM manufacturing, we are able to offer our customers high-performance, yet energy-efficient memory solutions to power the computers needed for medical research, financial markets, autonomous driving, smart cities and beyond,” mentioned Young-Soo Sohn, Vice President of the DRAM Memory Planning/Enabling Group at Samsung Electronics, in the assertion.

Samsung’s DDR5 DRAM module is at present in the testing section, although it’s mentioned to reach for patrons by late 2021.

Notably, Samsung is not the solely semiconductor firm that has began engaged on DDR5 commonplace. Its homegrown competitor and the second-largest reminiscence chipmaker SK Hynix introduced what it claimed the world’s first DDR5 DRAM in October final yr. American firm Rambus additionally introduced again in September 2017 about the growth of DDR5 reminiscence interface chipsets.


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